BCP69 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistor

SMD Type
TransistIoCrs
Product specification
BCP69
Features
High current.
Three current gain selections.
1.4 W total power dissipation.
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-32
V
Collector-emitter voltage
VCEO
-20
V
Emitter-base voltage
VEBO
-5
V
Collector current (DC)
IC
-1
A
Peak collector current
ICM
-2
A
Peak base current
IBM
-200
mA
Total power dissipation
*1
0.625
W
Ptot
*2
1
W
*3
1.4
W
Storage temperature
Tstg
-65 to +150
Junction temperature
Tj
150
Operating ambient temperature
Tamb
-65 to +150
Thermal resistance from junction to ambient *
*1
200
Rth(j-a)
*2
125
K/W
K/W
*3
89
K/W
Thermal resistance from junction to solder point
Rth(j-s)
15
K/W
*1 Device mounted on a FR4 PCB; single-sided copper; tinplated; standard footprint -for SOT223.
*2 Device mounted on a FR4 PCB; single-sided copper; tinplated; 1 cm² collector mounting pad.
*3 Device mounted on a FR4 PCB; single-sided copper; tinplated; 6 cm² collector mounting pad.
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2