BCP56-16 Datasheet, PDF (1/3 Pages) STMicroelectronics – Low power NPN Transistor

Product specification
BCP56 -16
■ Features
● For AF driver and output stages
● High collector current
● Low collector-emitter saturation voltage
SOT-223
6.50+0.2
-0.2
3.00+0.1
-0.1
4
Unit: mm
3.50^+0.2
-0.2
0.90+0.2
-0.2
7.00+0.3
-0.3
1
2
3
2.9
4.6
0.70+0.1
-0.1
1 base
2 collector
3 emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current (tP < 5ms)
power dissipation
thermal resistance from junction to ambient
junction temperature
storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICM
PD
RθJA
Tj
Tstg
Rating
100
80
5
1
1.5
1.5
94
150
-65 to +150
Unit
V
V
V
A
A
W
℃/W
℃
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Base-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Symbol
Testconditons
Min Typ Max Unit
V(BR)CBO IC= 0.1mA,IE=0
100
V(BR)CEO IC= 10mA,IB=0
80
V(BR)EBO IC= 10μA,IE=0
5
ICBO IE = 0 A; VCB = 30 V
100 nA
IEBO IC = 0 A; VEB = 5 V
100 nA
IC = 5 mA; VCE = 2 V
25
hFE IC =150 mA; VCE = 2 V
100
250
IC = 500 mA; VCE = 2 V
25
VCE(sat) IC = 500mA; IB = 50 mA
0.5 V
fT IC = 10 mA; VCE = 5 V; f = 100 MHz
130
MHz
■ Marking
Marking
BCP 56
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3