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| BC857S Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) | |||
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Product specification
SOT-363 Plastic-Encapsulate Transistors
BC857S Multi-Chip TRANSISTOR (PNP)
APPLICATION
This device is designed for general purpose amplifier applications
SOT-363
MARKING : 3C
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
-50
VCEO
Collector-Emitter Voltage
-45
VEBO
Emitter-Base Voltage
-5
IC
Collector Current-Continuous
-100
PD
Power Dissipation
200
RθJA
Thermal Resistance from Junction to Ambient
625
Tj
Junction Temperature
150
Tstg
Storage Temperature Range
-55~+150
Unit
V
mA
mW
â/W
â
ELECTRICAL CHARACTERISTICS(Ta= 25â unless otherwise specified)
Parameter
Symbol Test conditions
Min Typ Max Unit
Collector-base breakdown voltage
V(BR)CBO Ic=-10µA,IE=0
-50
V
Collector-emitter breakdown voltage
V(BR)CEO Ic=-1mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10µA,IC=0
-5
V
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
ICBO
VCB=-30V,IE=0
IEBO
hFE *
VEB =4V, IC=0
VCE=-5V,IC=-2mA
VCE(sat)(1) IC=-10mA,IB=-0.5mA
VCE(sat)(2) IC=-100mA,IB=-5mA
-15
nA
15
nA
125
630
-0.3
V
-0.65 V
Base-emitter voltage
VBE(1)
VBE(2)
VCE=-5V,IC=-2mA
VCE=-5V,IC=-10mA
-0.6
-0.75 V
-0.82 V
Transition frequency
fT
VCE=-5V,IC=-10mA,f=100MHz
200
MHz
Collector output capacitance
Cob
Noise figure
NF
*pulse test: Pulse Width â¤300μs, Duty Cycle⤠2.0%.
VCB=-10V,IE=0,f=1MHz
VCE=-5V,Ic=-0.2mA,
f=1kHz,Rs=2kâ¦,BW=200Hz
3.5
pF
2.5
dB
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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