BC849 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistors

SMD Type
TransistIoCrs
Product specification
BC849, BC850
Features
Low current (max. 100 mA)
Low voltage (max. 45 V).
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
collector-base voltage
30
V
VCBO
50
V
collector-emitter voltage
30
V
VCEO
45
V
emitter-base voltage
VEBO
5
V
collector current (DC)
IC
100
mA
peak collector current
ICM
200
mA
peak base current
IBM
200
mA
total power dissipation Tamb 25 *
Ptot
250
mW
storage temperature
Tstg
-65 to 150
junction temperature
Tj
150
operating ambient temperature
Tamb
-65 to 150
thermal resistance from junction to ambient *
Rth(j-a)
500
K/W
* Transistor mounted on an FR4 printed-circuit board.
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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