BC847PN Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – NPN/PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

SMD Type
TransistIoCrs
Product specification
BC847PN
■ Features
● Two internal isolated NPN/PNP Transistors in one package
● For Switching and AF Amplifier Applications
● Ultra-Small Surface Mount Package
C₁
B₂
E₂
E₁
B₁
C₂
SOT-363
1.3+0.1
-0.1
0.65
6 54
Unit: mm
1 23
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
1 E1
2 B1
3 C2
4 E2
5 B2
6 C1
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCBO
50
V
VCBO
45
V
VEBO
6
V
IC
0.1
A
PC
200
mW
TJ
150
℃
Tstg
-55 to +150
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base Breakdown voltage
Collector-base cutoff current
Emitter-base cutoff current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Transition frequency
Noise figure
■ Marking
Marking
7P
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC = 10μA , IE = 0
50
V
V(BR)CEO IC = 10mA , IB = 0
45
V
V(BR)EBO IE = 10 μA , IC = 0
6
V
ICBO VCB = 30 V , IE = 0
15 nA
IEBO VEB = 5 V , IC = 0
15 nA
hFE VCE = 5 V , IC = 2 mA
200
450
VCE(sat) IC = 100 mA , IB = 5mA
0.6 V
VBE(sat) IC = 100 mA , IB = 5mA
0.9
V
Cob VCB=10V,f=1MHz
VCE = 5 V , IC = 10 mA ,
fT
100
f = 100 MHz
VCE=5V,IC=0.2mA,f=1kHz,
NF
Rg=2KΩ,Δf=200Hz
6 pF
MHz
10 dB
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