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| BC807W Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor | |||
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Product specification
SOT-323 Plastic-Encapsulate Transistors
BC807W TRANSISTOR (PNP)
FEATURES
z Ldeally suited for automatic insertion
SOT-323
z Epitaxial planar die construction
z Complementary to BC817W
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-45
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-0.5
A
PC
Collector Power Dissipation
0.2
W
RθJA
Thermal Resistance from
Junction to Ambient
6
â/W
1. BASE
2. EMITTER
3. COLLECTOR
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55~+150 â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol Test conditions
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(on)
fT
Cob
IC=-10μA,IE=0
IC=-10mA,IB =0
IE=-1μA,IC =0
VCB=-20 V , IE=0
VCE=-20 V , IB=0
VEB=-5 V , IC=0
VCE=-1V,IC= -100mA
VCE=-1V,IC= -500mA
IC=-500mA,IB=-50 mA
VCE= -1V,IC= -500mA
VCE=-5 V, IC= -10mA
f=100MHz
VCB=-10V,f=1MHz
Min Max Unit
-50
V
-45
V
-5
V
-0.1
μA
-0.2
μA
-0.1
μA
100 600
40
-0.7
V
-1.2
V
80
MHz
10
pF
CLASSIFICATION of hFE (1)
Rank
Range
Marking
BC807-16W
100-250
5A
BC807-25W
160-400
5B
BC807-40W
250-600
5C
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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