BC637 Datasheet, PDF (1/1 Pages) KEC(Korea Electronics) – EPITAXIAL PLANAR NPN TRANSISTOR(HIGH CURRENT TRANSISTORS)

Product specification
TO-92 Plastic-Encapsulate Transistors
BC635/637/639 TRANSISTOR (NPN)
FEATURES
High current transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
V_CBO
Collector-Emitter Voltage
BC635
45
V
BC637
60
V
BC639
100
V
V_CEO
Collector-Emitter Voltage
BC635
45
V
BC637
60
V
BC639
80
V
V_EBO
Emitter-Base Voltage
5
V
I_C
Collector Current -Continuous
1
A
P_C
Collector Power Dissipation
0.83
W
T_J
Junction Temperature
150
℃
T_stg
Storage Temperature
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
-65-150
Min
℃
Typ Max Unit
I_C=10mA, I_B=0
BC635 45
V
Collector-emitter breakdown voltage
V_(BR)CEO
BC637 60
V
BC639 80
V
Collector cut-off current
Emitter cut-off current
DC current gain
I_CBO
V_CB= 30 V,I_E=0
I_EBO
V_EB=5V, I_B=0
h_FE(1) V_CE=2 V, I_C= 5mA
25
h_FE(2) V_CE=2V, I_C=150mA
BC635
40
BC637-10/BC639-10 63
0.1
μA
0.1
μA
250
160
BC637-16/BC639-16 100
250
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
h_FE(3)
V_CE(sat)
V_BE
f_T
V_CE=2V, I_C= 500mA
I_C=500mA, I_B=50mA
V_CE=2V, I_C=500mA
V_CE=5V, I_C=10mA,f= 50 MH_Z
25
0.5
V
1
V
100
MHz
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