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| BC636 Datasheet, PDF (1/1 Pages) Motorola, Inc – High Current Transistors | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
BC636,BC638,BC640 TRANSISTOR (PNP)
FEATURES
High current transistors
TO-92
1. EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
2. COLLECTOR
Symbol
VCBO
VCEO
VEBO
IC
PC
RÓ¨JA
Tj
Tstg
Parameter
Collector-Base Voltage BC636
BC638
BC640
Collector-Emitter Voltage BC636
BC638
BC640
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance, junction to Ambient
Junction Temperature
Storage Temperature
Value
-45
-60
-100
-45
-60
-80
-5
-1
0.83
150
150
-55-150
Unit
V
V
V
A
W
â/W
â
â
3. BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol Test conditions
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)
VBE
fT
IC=-100μA,IE=0
BC636
BC638
BC640
IC =-1mA,IB=0
BC636
BC638
BC640
IE=-100μA,IC=0
VCB=-30V,IE=0
VEB= -5V,IC=0
VCE= -2V,IC=- 5mA
VCE= -2V,IC=- 150mA
VCE= -2V,IC=- 500mA
IC=- 500mA,IB= -50mA
VCE= -2V,IC= -500mA
VCE= -5V,IC=- 50mA,f=100MHz
Min
-45
-60
-100
-45
-60
-80
-5
40
63
25
100
Typ Max Unit
V
V
V
-0.1 μA
- 0.1 μA
250
-0.5
V
-1
V
MHz
CLASSIFICATION OF hFE(2)
Rank
Range
BC636-10
63-160
BC636-16, BC638-16, BC640-16
100-250
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