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| BC516 Datasheet, PDF (1/1 Pages) NXP Semiconductors – PNP Darlington transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
BC516 TRANSISTOR (PNP)
FEATURES
z High DC Current Gain
z High Collector Current
TO â 92
1.COLLECTOR
2.BASE
3.EMITTER
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-10
-1
625
200
150
-55~+150
Unit
V
V
V
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter
breakdown
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Test conditions
IC= -0.1mA,IE=0
IC=-2mA,IB=0
IE=-10μA,IC=0
VCB=-30V,IE=0
VCE=-2V, IC=-20mA
IC=-100mA,IB=-0.1mA
IC=-100mA,IB=-0.1mA
VCE=-5V, IC=-10mA
VCE=-5V,IC=-10mA, f=100MHz
Min Typ
-40
-30
-10
30000
200
Max
-0.1
-1
-1.5
-1.4
Unit
V
V
V
μA
V
V
V
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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