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| BC350 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (PNP) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
BC350 TRANSISTOR (PNP)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-50
-45
-5
-0.1
0.3
416
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= -0.1mA,IE=0
-50
V
V(BR)CEO IC=-1mA,IB=0
-45
V
V(BR)EBO IE=-0.1mA,IC=0
-5
V
ICBO
VCB=-50V,IE=0
-0.1 μA
ICEO
VCE=-35V,IB=0
-0.1 μA
IEBO
VEB=-3V,IC=0
-0.1 μA
hFE
VCE=-5V, IC=-2mA
40
450
VCE(sat)
IC=-10mA,IB=-1mA
-0.3
V
VBE(sat)
IC=-10mA,IB=-1mA
-1
V
fT
VCE=-5V,IC=-10mA,f=30MHz 125
MHz
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