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| BC347 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR (NPN) | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
BC347 TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1.EMITTER
2.BASE
3.COLLECTOR
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
50
45
5
0.1
0.3
416
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Test conditions
IC= 0.1mA,IE=0
IC=1mA,IB=0
IE=0.1mA,IC=0
VCB=50V,IE=0
VCE=35V,IB=0
VEB=3V,IC=0
VCE=5V, IC=2mA
IC=10mA,IB=1mA
IC=10mA,IB=1mA
VCE=5V,IC=10mA,f=30MHz
Min Typ Max Unit
50
V
45
V
5
V
0.1
μA
0.1
μA
0.1
μA
40
450
0.3
V
1
V
125
MHz
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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