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| BC337 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
BC337/BC338
FEATURES
Power dissipation
TRANSISTOR (NPN)
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
BC337
BC338
VCEO
Collector-Emitter Voltage BC337
BC338
VEBO
IC
PD
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
Value
50
30
45
25
5
800
625
150
-55-150
Unit
V
V
V
mA
mW
â
â
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
BC337
BC338
Collector-emitter breakdown voltage
BC337
BC338
Emitter-base breakdown voltage
Collector cut-off current
BC337
BC338
Collector cut-off current
BC337
BC338
Emitter cut-off current
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Transition frequency
Symbol
VCBO
VCEO
VEBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
VBE
fT
Collector Output Capacitance
Cob
Test conditions
IC= 100uA, IE=0
IC= 10mA , IB=0
IE= 10uA, IC=0
VCB= 45V, IE=0
VCB= 25V, IE=0
VCE= 40V, IB=0
VCE= 20V, IB=0
VEB= 4 V, IC=0
VCE=1V, IC= 100mA
VCE=1V, IC= 300mA
IC=500mA, IB= 50mA
IC= 500mA, IB=50mA
VCE=1V, IC= 300mA
VCE= 5V, IC= 10mA
f = 100MHz
VCB=10V,IE=0
f=1MHZ
MIN
TYP
50
30
45
25
5
100
100
160
250
60
210
15
MAX UNIT
V
V
V
V
V
0.1
0.1
uA
0.2
0.2
uA
0.1
uA
630
250
400
630
0.7
V
1.2
V
1.2
V
MHz
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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