BAW56S Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode array

Product specification
BAW56S
Features
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 450 mA.
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Per diode
repetitive peak forward current
VRRM
continuous reverse voltage
VR
continuous forward current
single diode loaded;
IF
all diodes loaded;
repetitive peak forward current
IFRM
square wave; Tj = 25 prior to surge;
non-repetitive peak forward current
IFSM
t=1 s
t = 1 ms
t=1s
total power dissipation
Ptot
Ts = 60 ; note 1
storage temperature
Tstg
-65
junction temperature
Tj
-65
thermal resistance from junction to ambient
Rth j-a
Note
1. One or more diodes loaded.
Max
Unit
85
V
75
V
250
mA
100
mA
450
mA
4
A
1
0.5
350
mW
+150
+150
255
K/W
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