BAW101S Datasheet, PDF (1/2 Pages) NXP Semiconductors – High voltage double diode

Product specification
BAW101S
Features
Small plastic SMD package
High switching speed: max. 50 ns
High continuous reverse voltage: 300 V
Electrically insulated diodes.
SOT-363
1.3+0.1
-0.1
0.65
Unit: mm
0.3+0.1
-0.1
2.1+0.1
-0.1
0.1+0.05
-0.02
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Per diode
continuous reverse voltage
VR
series connection
repetitive peak forward current
VRRM
series connection
continuous forward current
single diode loaded;
IF
double diode loaded;
repetitive peak forward current
IFRM
non-repetitive peak forward current
IFSM square wave; Tj = 25 prior to surge;t = 1 s
total power dissipation
Ptot
Ts = 25
storage temperature
Tstg
-65
junction temperature
Tj
operating ambient temperature
Tamb
-65
thermal resistance from junction to soldering point Rth j-s
thermal resistance from junction to ambient
Rth j-a
Max
Unit
300
V
600
300
V
600
250
mA
140
625
mA
4.5
A
350
mW
+150
150
+150
255
K/W
357
K/W
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