BAV99S Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Switching Diode Array (For high-speed switching applications Connected in series Internal galvanic isolated Diodes in one package)

Product specification
SOT-363 Plastic-Encapsulate Diodes
BAV99S
HIGH-SPEED SWITCHING DIODE
FEATURES
 Small Plastic Package
 High Switching Speed
 Low Capacitance
 Two Electrically Isolated Series Configuration Arrays
APPLICATION
 General Purpose Switching in e.g. Surface Mounted Circuits
 Rail to Rail(ESD)Protection
MARKING: K1
MAXIMUM RATINGS @( T_a=25℃ unless otherwise noted )
SOT-363
Symbol
VRRM
VR
IF
IFRM
IFSM
PD
RΘJA
Tj
Tstg
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current, square wave; Tj=25℃ tp =1us
square wave; Tj =25℃ tp =1ms
Power Dissipation
square wave; Tj =25℃ tp =1s
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Limits
85
75
150
450
4.5
1
0.5
200
625
150
-55~+150
Unit
V
V
mA
A
mW
℃/W
℃
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Reverse voltage
V(BR) IR=100μA
75
Reverse current
IR
VR=75V
IF=1mA
Forward voltage
IF=10mA
VF
IF=50mA
IF=150mA
Total capacitance
Ctot
VR=0,f=1MHz
Reverse recovery time
trr
IF= IR=10mA, Irr=0.1×IR, RL=100Ω
Max
1
0.715
0.855
1
1.25
1.5
6
Unit
V
μA
V
pF
ns
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