BAV99 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed double diode

Features
Small plastic SMD package.
High switching sped: max.4 ns.
Repetitive peak forward current: max.450 mA.
Product specification
BAV99
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
0.1+0.05
-0.01
1.9+0.1
-0.1
3
Absolute Maximum Ratings Ta = 25
1
2
Parameter
Symbol
Rating
Unit
Repetitive peak reverse voltage
VRRM
85
V
Continuous reverse voltage
VR
75
V
Continuous forward current(single diode loaded *)
---------------------------------(double diode loaded *)
IF
215
125
mA
Repetitive peak forward current
IFRM
450
mA
Non-repetitive peak forward current Tj=25 t=1 s
4
t=1ms
IFSM
1
A
t=1s
0.5
power dissipation *
PD
250
mW
Thermal resistance from junction to tie-point
Rth j-tp
360
K/W
Thermal resistance from junction to ambient *
Rth j-a
500
K/W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-65 to +150
* Device mounted on an FR4 printed-circuit board.
Electrical Characteristics Ta = 25
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
IF =1 mA
IF =10 mA
VF
IF =50 mA
IF =150 mA
Test conditions
VR =25 V
VR =75 V
IR
VR =25 V; Tj= 150
VR =75 V; Tj= 150
Cd VR =0 V, f= 1 MHz
trr
when switched from IF= 10 mA to
IR=10mA;RL=100 ; measured at IR= 1mA
Vfr IF = 10 mA, tr= 20 ns
Max Unit
715 mV
855 mV
1
V
1.25 V
30 nA
1
A
30
A
50
A
1.5 pF
4 nS
1.75 V
■ Marking
Marking
A7w
1.Base
2.Emitter
3.collector
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 3