BAV23S Datasheet, PDF (1/3 Pages) NXP Semiconductors – General purpose double diode

Features
Small plastic SMD package
Switching speed: max. 50 ns
General application
Continuous reverse voltage: max. 200 V
Repetitive peak reverse voltage: max. 250 V
Repetitive peak forward current: max. 625 mA.
3
1
2
Product specification
BAV23S
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Repetitive peak reverse voltage
Continuous reverse voltage
S y mbo l
Rating
Un it
VRRM
250
V
VR
200
V
Continuous forward current (single diode loaded *)
IF
(double diode loaded *)
225
mA
125
Repetitive peak forward current
Non-repetitive peak forward current (Tj = 25
) t=1us
t = 100us
t =10ms
power dissipation (Tamb = 25 ) *
thermal resistance from junction to tie-point
thermal resistance from junction to ambient *
Storage temperature
Junction temperature
* Device mounted on an FR4 printed-circuit board.
I FRM
IFS M
PD
Rth j-tp
Rth j-a
Tst g
Tj
625
9
3
1. 7
250
360
500
-65 to +150
150
mA
A
mW
K/W
K/W
Electrical Characteristics Ta = 25
P aram ete r
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
S ym bol
Co ndi tio ns
M ax
Unit
IF = 100 mA
VF
IF = 200 mA
1.0
V
1.25
V
VR = 200 V
IR
VR = 200V; Tj = 150
1 00
nA
1 00
mA
Cd
f = 1 MHz; VR = 0 V;
5
pF
trr
when switched from IF =30 mA to IR = 30 mA;
50
ns
RL = 100 ; measured at IR = 3 mA;
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