BAT68-04W Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – Silicon Schottky Diode

Product specification
BAT68-04W,BAT68-05W,BAT68-06W
Features
For mixer applications in VHF/UHF range
For high-speed switching application
Absolute Maxim um Ratings Ta = 25
P aram eter
Sym bol
Value
Diode reverse voltage
VR
8
Forward current
IF
130
Total power dissipation
TS 92
P tot
150
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Junction - soldering point(Note 1)
R thJS
390
Note
1.For calculation of RthJA please refer to Application Note Therm al Resistance
Unit
V
mA
mW
K/W
Electrical Characteristics Ta = 25
P aram eter
Breakdown voltage
Reverse current
Forward voltage
Diode capacitance
Differential forward resistance
Symbol
Conditions
Min
Typ
Max
Unit
V(BR)
I(BR) = 10 A
8
V
VR = 1 V
IR
VR = 1 V, TA = 60
0.1
A
1.2
IF = 1 mA
318
340
VF
mV
IF = 10 mA
340
390
500
CT
VR = 0 , f = 1 MHz
1
pF
RF
IF = 5 mA, f = 10 KHz
10
Marking
Type
Marking
BAT68-04W
84s
BAT68-05W
85s
BAT68-06W
86s
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