BAT18 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Band-switching diode

Product specification
BAT18;BAT18-04
BAT18-05;BAT18-06
Features
Low-loss VHF/UHF switch above 10 MHz
Pin diode with low forward resistance
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maximum Ratings Ta = 25
Parameter
Reverse Voltage
Forward Current
Operating and storage temperature range
Junction - ambient
Symbol
VR
IF
Top, Tstg
Rth JA
Value
35
100
-55 to +150
450
Unit
V
mA
K/W
1.Base
2.Emitter
3.collector
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse current
Diode capacitance
Forward resistance
Series inductance
Symbol
Conditions
M in
Typ
Max
Unit
VF
IF = 100 mA
0.38
1.2
V
VR = 20 V
IR
VR = 20 V, TA = 60
20
nA
200
CT
VR = 20 V, f = 1 MHz
0.75
1
pF
rf
IF = 5 mA, f = 100 MHz
0.4
0.7
Ls
2
nH
Marking
Type
Marking
BAT18
A2
BAT18-04
AU
BAT18-05
AS
BAT18-06
AT
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1