BAT15-03W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type)

Features
DBC mixer applications to 12 GHz
Low noise figure
Low barrier type
Product specification
BAT15-03W
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Diode reverse voltage
Forward current
Total power dissipation
Ts = 70
Operating temperature range
Storage temperature
Junction ambient ⁽¹⁾
Junction-soldering point
Note:
1.Package mounted on an epoxy pcb 40 mm 40 mm
Symbol
VR
IF
Ptot
Top
Tstg
RthJA
RthJS
Value
4
100
100
-55 to+150
-55 to+150
770
690
15 mm/1cm² Cu.
Electrical C haracteristics T a = 25
Param eter
Breakdown Voltage
I(BR) = 5 A
Forward voltage
IF = 1 m A
IF = 10 m A
Diode capacitance
VR = 0; f = 1 MHz
Differential forward resistance
IF 10 m A/50 m A
Sym bol
V (BR)
VF
CT
RF
M in
4
Unit
V
mA
mW
K/W
K/W
Typ
Max
0.23
0.32
5.5
0.32
0.41
0.35
U n it
V
V
pF
Marking
Marking
P
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