BAT14-03W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance)

Features
DBS mixer application to 12GHz
Medium barrier type
Low capacitance
Product specification
BAT14-03W
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Unit
Diode reverse voltage
VR
4
V
Forward current
IF
90
mA
Operating temperature range
Top
-55 to+125
Storage temperature
Tstg
-55 to+150
Total power dissipation
Junction ambient ⁽¹⁾
Ts 85
Ptot
RthJA
100
mW
450
Junction-soldering point
RthJS
690
K/W
Note:
1.Package mounted on an epoxy pcb 40 mm 40 mm 15 mm/1cm² Cu.
Electrical Characteristics Ta = 25
Breakdown Voltage
Forward voltage
P aram eter
Diode capacitance
Differential forward resistance
I(BR) = 5 A
IF = 1 mA
IF = 10 mA
VR = 0; f = 1 MHz
IF = 10 mA/50 mA
Sym bol
V (BR )
VF
CT
RF
Min
4
0.36
0.48
Typ
0.43
0.55
0.22
5.5
Max
0.52
0.66
0.35
Unit
V
V
pF
Marking
Marking
O
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