 English |
|
|
|
|
|
|
|
| BAS716 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Low-leakage diode | |||
| |||
|
Product specification
SOD-523 Plastic-Encapsulate Diodes
BAS716 FAST SWITCHING DIODE
SOD-523
FEATURES
z Small Package
z Low Reverse Current
z Fast Switching Speed
z Surface Mount Package Ideally Suited for Automatic Insertion
MARKING:S1
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Symbol
Parameter
VRM
Non-Repetitive Peak Reverse Voltage
VRRM
Peak Repetitive Reverse Voltage
VRWM
Working Peak Reverse Voltage
VR(RMS)
RMS Reverse Voltage
IO
Average Rectified Output Current
IFSM
Peak Forward Surge Current @t=8.3ms
PD
Power Dissipation
RÎJA
Thermal Resistance from Junction to Ambient
Tj
Junction Temperature
Tstg
Storage Temperature
Value
100
75
53
200
1
225
556
150
-55~+150
Unit
V
V
V
mA
A
mW
â/W
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ Max Unit
Reverse voltage
Reverse current
V(BR)
IR
IR=100μA
VR=75V
VR=100V
IF=1mA
75
V
5
nA
80
nA
0.9
V
Forward voltage
IF=10mA
VF
IF= 50mA
1
V
1.1
V
IF=150mA
1.25
V
Total capacitance
Ctot
VR=0V,f=1MHz
2
pF
Reverse recovery time
trr
IF= IR =10mA, Irr=0.1*IR
3
μs
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 1
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese