BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

Product specification
BAS70 series
Features
Low forward current
High breakdown voltage
Guard ring protected
Small plastic SMD package
Low diode capacitance.
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Repetitive peak forward current
Non-repetitive peak forward current
Storage temperature
Junction temperature
Operating ambient temperature
thermal resistance from junction to ambient
Symbol
VR
IF
IFRM
IFSM
Tstg
Tj
Tamb
Rth j-a
Conditions
tp 1 s; ä 0.5
tp < 10 ms
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
Unit: mm
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Min
Max
Unit
70
V
70
mA
70
mA
100
mA
-65
+150
150
-65
+150
500
K/W
Electrical Characteristics Ta = 25
P aram eter
Forward voltage
Reverse voltage leakage current
Charge carrier life tim e (Krakauer m ethod)
Diode capacitance
Note
1. Pulse test: tp = 300 s; ä = 0.02
Sym bol
VF
IR
Cd
Conditions
IF = 1 mA
IF = 10 mA
IF = 15 mA
VR = 50 V; note 1
VR = 70 V; note 1
IF = 5 mA
f = 1 MHz; VR = 0;
Max
410
750
1
100
10
100
2
Unit
mV
mV
V
nA
A
ps
pF
Marking
Type
Marking
BAS70
73*
BAS70-04
74*
BAS70-05
75*
BAS70-06
76*
BAS70-07
77p
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1