BAS40V Datasheet, PDF (1/1 Pages) Diodes Incorporated – DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Product specification
SOT-563 Plastic-Encapsulate Diodes
BAS40V SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Fast Switching
SOT-563
654
Marking: KAN
Maximum Ratings @Ta=25℃
Parameter
Non-Repetitive Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Output Current
Power Dissipation
Thermal Resistance Junction to
Ambient
Junction temperature
Storage temperature range
Symbol
V_RM
V_R
I_O
Pd
R_θJA
T_J
T_STG
1 23
Limit
40
200
150
667
125
-55~+150
Unit
V
mA
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Reverse breakdown voltage
V_(BR)
I_R= 10μA
40
Reverse voltage leakage current
Forward voltage
Total capacitance
Reverse recovery time
I_R
V_R=30V
V_F
I_F=1mA
I_F=40mA
C_T
V_R=0,f=1MHz
t _rr
I_F=10mA, I_R=I_F=1mA
R_L=100Ω
Max
200
380
1000
5
5
Unit
V
nA
mV
pF
ns
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