BAS32L Datasheet, PDF (1/1 Pages) NXP Semiconductors – High-speed diode

Features
Small hermetically sealed glass SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 75 V
Repetitive peak forward current:max. 450 mA.
Product specification
BAS32L
LL-34
2.64REF
0.50
0.35
3.60
3.30
Unit: mm
1.50
1.30
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current t = 1 s
t = 1 ms
t=1s
total power dissipation
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
junction temperature
storage temperature
Symbol
VR
IF
IFRM
IFSM
PD
Rth j-tp
Rth j-a
Tj
Tstg
Rating
75
200
450
4
1
0.5
500
300
350
200
-65 to +200
Unit
V
mA
mA
A
mW
K/W
K/W
Electrical Characteristics Ta = 25
Parameter
forward voltage
reverse current
reverse breakdown voltage
diode capacitance
reverse recovery time
forward recovery voltage
Symbol
VF
IR
V(BR)R
Cd
trr
Vfr
Testconditons
IF = 5 mA
IF =100 mA
IF =100 mA;TJ=100
VR = 20 V
VR = 75 V
VR = 20 V; Tj = 150
VR = 75 V; Tj = 150
IR = 100 A
f = 1 MHz; VR =0V
when switched from IF = 10 mA to IR = 10 mA;
RL = 100 ;measured at IR = 1 mA
when switched from IF = 50 mA;tr = 20 ns;
* Pulsed test: tp = 300 ìs; ä = 0.02.
Min. Max Unit
620 750
1000 mV
930
25 nA
5
A
50
A
100
A
100
V
2 pF
4 ns
2.5 V
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