BAS216 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed switching diode

Product specification
BAS216
Features
Small ceramic SMD package
High switching speed:max. 4 ns
Continuous reverse voltage:max.75V
Repetitive peak reverse voltage:max.85V
Repetitive peak forward current:max. 500 mA.
SOD110
Unit: mm
cathode
idenfifier
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Continuous peak reverse voltage
VRRM
Continuous reverse voltage
VR
Continuous forward current
IF
Note 1
Repetitive peak forward current
IFSM
square wave; Tj = 25 prior to surge;
Non-repetitive peak forwrad current
IFSM
t=1 A
t = 1 ms
t=1s
Total power dissipation
Ptot
Tamb = 25 ;note 1
Storage temperature
Tstg
-65
Junction temperature
Tj
Note
1. Device mounted on an FR4 printed-circuit board.
Max
Unit
85
V
75
V
250
mA
500
mA
4
A
1
0.5
400
mW
+150
150
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