BAS170WS Datasheet, PDF (1/1 Pages) Vishay Siliconix – Schottky Diodes

Product specification
BAS170WS
Features
Schottky diode for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
PARAMATER
SYMBOL
TEST CONDITION
Repetitive peak reverse voltage
VRM
Forward continuous current
IF
Tamb = 25
Surge forward current
Power Dissipation ⁽¹⁾
Thermal resistance junction to ambient air⁽¹⁾
IFSM
Ptot
RèJA
tp < 1 s, Tamb = 25
Tamb = 25
Junction temperature
Tj
Operating temperature range
Ramb
Storage temperature range
Ts
1.valid provided that electrodes are kept at ambient temperature
VALUE
70
70
600
200
650
150
-55 to+125
-55 to+125
UNIT
V
mA
mA
mW
/W
Electrical Characteristics Ta = 25
PARAMATER
Reverse breakdown voltage
SYMBOL
V(BR)R
Leakage current
IR
Forward voltage
VF
Forward voltage ⁽¹⁾
VF
Capacitance
Ctot
Charge carrier lifetime
t
Differential forward resistance
RF
Note:
1.Pulse test: tp 300 s
TEST CONDITION
IR = 10 A(Pulse)
VR =50 V
VR =70 V
IF = 200 mA
I < tief < F = 10 mA
VF = 15 mA
VR =0 V, f =1 MHz
IF = 25 mA;
IE = 5 mA; f = 10 kHz
MIN
TYP
MAX
UNIT
70
V
0.1
A
10
A
375
410
V
705
750
V
880
1000
mV
1.5
2
pF
100
ps
34
Marking
Marking
73
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