BAS16-03W Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon Switching Diode Preliminary data (For high-speed switching applications)

Features
For high-speed Switching applications
Product specification
BAS16-03W
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Diode reverse voltage
VR
80
Peak reverse voltage
VRM
85
Forward current
IF
250
Non-repetitive peak surge forward current
t = 1.0 s
IFSM
4.5
Total power dissipation
Ts 116
Ptot
250
Junction Temperature
Tj ,
150
Storage Temperature
Junction soldering point⁽¹⁾
Tstg
RthJS
-65 to+150
135
Note:
1.For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
A
mW
K/W
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