BAS140WS Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – SILICON SWICHING DIODE

Product specification
BAS140WS
Features
General purpose diodes for high-speed switching
Circuit protection
Voltage clamping
High-level detecting and mixing
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Value
Unit
Reverse voltage
VR
40
V
Forward current
IF
120
mA
Surge forward current
t 1.0 s
IFSM
200
mA
Total power dissipation
Ts 113
Ptot
250
mW
Operating temperature range
Top
-55 to+125
Storage Temperature range
Tstg
-65 to+150
Junction ambient⁽¹⁾
RthJA
260
K/W
Junction- soldering point
RthJS
150
K/W
Note:
1.Package mounted on an epoxy pcb 40 mm 40 mm 15 mm/1cm² Cu.
Electrical Characteristics Ta = 25
P aram eter
Symbol
Min
Breakdown voltage
I(BR) = 10 A
V(BR)
40
Forward voltage
IF = 1 mA
IF = 10 mA
250
VF
350
IF = 15 mA
600
Reverse current
VR = 30 V
IR
VR = 40 V
Diode capacitance
VR = 0; f = 1 MHz
CT
Differential forward resistance IF = 10 mA, f = 10 KHz
RF
Series inductance
Ls
Typ
Max
Unit
V
310
380
mV
450
500
720
1000
1
A
10
3
5
pF
10
2
nH
Marking
Marking
4
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