BAS125W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)

Product specification
BAS125W;BAS125-04W
BAS125-05W;BAS125-06W
Features
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage
Absolute Maxim um Ratings Ta = 25
P aram eter
Diode reverse voltage
Forward current
Surge forward current ( t 10ms)
Total Power dissipation TS 25
Junction temperature
Storage temperature
Junction ambient BAS125W ( Note 1)
Junction ambient BAS125-04W 06W ( Note 1)
Junction - soldering point BAS125W
Junction - soldering point BAS125-04W 06W
Note
Package mounted on alumina 15mm 16.7mmm
Symbol
VR
IF
IFSM
P tot
Tj
Tstg
R thJA
RthJA
RthJS
RthJS
0.7m m
Value
25
100
500
250
150
-50 to +150
310
425
230
265
Electrical Characteristics Ta = 25
Parameter
Symbol
Test Conditions
Min
Reverse current
VR = 20 V
IR
VR = 25 V
IF = 1 mA
Forward voltage
VF
IF = 10 mA
IF = 35 mA
Diode capacitance
CT
VR = 0 V, f = 1 MHz
Differential forward resistance
RF
IF = 5 mA, f = 10 KHz
Marking
Type
Marking
BAS125W
13s
BAS125-04W BAS125-05W BAS125-06W
14s
15s
16s
Unit
V
mA
mA
mW
K/W
K/W
K/W
K/W
Typ
Max
Unit
150
nA
200
385
400
530
650
mV
800
900
1.1
pF
16
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