BAS116 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Low-leakage diode

Product specification
BAS116
Features
Plastic SMD package
Low leakage current: typ. 3 pA
Switching time: typ. 0.8 ìs
Continuous reverse voltage:max. 75 V
Repetitive peak reverse voltage:max. 85 V
Repetitive peak forward current:max. 500 mA.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Conditions
Min
Repetitive peak reverse voltage
VRRM
Continuous reverse voltage
VR
Continuous forward current
IF
Repetitive peak forward current
IFRM
square wave; Tj = 25 prior to surge
Non-repetitive peak forward current
IFSM
t=1 s
t = 1 ms
t=1s
Total power dissipation
Ptot
Ta mb = 25 ; note 1
Storage temperature
Tstg
-65
Junction temperature
Tj
thermal resistance from junction to tie-point
Rth j-t p
thermal resistance from junction to ambient
Rth j-a
Max
Unit
85
V
75
V
215
mA
500
mA
4
A
1
0.5
250
mW
+150
150
330
K/W
500
K/W
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