BAR81 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

Product specification
BAR81
Features
Design for use in shunt configuration
High shunt signal isolation
Low shunt insertion loss
Unit: mm
Absolute M axim um Ratings Ta = 25
Param eter
Diode reverse voltage
Forward current
Junction tem perature
Operating tem perature range
Storage tem perature
Sym bol
VR
IF
Tj
Top
T stg
V a lu e
30
100
150
-55 to +125
-55 to +150
U n it
V
mA
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current
IR
VR = 20 V
20
nA
Forward voltage
VF
IF = 100 mA
0.93
1
V
Diode capacitance
VR = 1 V, f = 1 MHz
CT
VR = 3 V, f = 1 MHz
0.6
pF
0.57
Forward resistance
rf
IF = 5 mA, f = 100 MHz
0.7
Series inductance chip to ground
LS
1.5
nH
Marking
Type
Marking
BAR81
BBs
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