BAR64-03W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon PIN Diode

Product specification
BAR64-03W
Features
High voltage current controlled RF resistor for RF attenuator and swirches
Freqency range above 1 MHz
Low resistance and short carrier lifetime
For frequencies up to 3 GHz
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maxim um Ratings Ta = 25
P aram eter
Symbol
Reverse voltage
VR
Forward current
IF
Total Power dissipation TS 25
P tot
Junction temperature
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Junction - soldering point¹⁾
RthJA
Note:
1.Package mounted on alumina 15mm x 16.7mm x 0.7mm
Value
200
100
250
150
-55 to +150
-55 to +150
450
Unit
V
mA
mW
K/W
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Forward voltage
Diode capacitance
Symbol
V(BR)
VF
CT
Forward resistance
rf
Charge carrier life time
rr
Series inductance
Ls
Conditions
IR = 5 A
VR = 20 V, f = 1 MHz
VR = 0 V, f = 100 MHz
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 100 mA, f = 100 MHz
IF = 10 mA, IR = 6 mA,IR = 3mA
Min
Typ
Max
Unit
200
V
1.1
V
0.23
0.35
pF
12.5
20
2.1
3.8
0.85
1.35
1.55
s
2
nH
Marking
Marking
2
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