BAR64-02W Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz)

Product specification
BAR64-02W
Features
High voltage current controlled RF resistor for RF attenuator and switches
Frequency range above 1 MHz
Low resistance and short carrier lifetime
Very low inductance
For frequencies up to 3 GHz
Extremely small plastic SMD package
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
A bsolute M axim um R atings T a = 25
P aram eter
D iode reverse voltage
Forward current
T otal pow er dissipation, T S 125
Junction tem perature
O perating tem perature range
S torage tem perature
Junction - am bient (N ote 1)
Junction - soldering point
N ote
1.P ackage m ounted on alum ina 15m m
Sym bol
VR
IF
P tot
Tj
Top
T stg
R thJA
R thJS
V alue
200
100
250
150
-55 to +150
-55 to +150
220
140
16.7m m 0.7m m
U nit
V
mA
mW
K /W
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Forward voltage
Diode capacitance
Case capacitance
Forward resistance
Charge carrier life time
Series inductance
Symbol
Test Condition
Min
Typ
Max
Unit
VR
I(BR) = 5 A
200
V
VF
IF = 50 mA
1.1
mV
CT
VR = 20 V, f = 1 MHz
CC
f = 1 MHz
0.23
0.35
pF
0.09
IF = 1 mA, f = 100 MHz
12.5
20
rf
IF = 10 mA, f = 100 MHz
2.1
3.8
IF = 100 mA, f = 100 MHz
0.85
1.35
trr
IF = 10 mA, IR = 6 mA,IR = 3 mA
1.55
s
Ls
0.6
nH
Marking
Marking
M
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