BAR63-03W Datasheet, PDF (1/2 Pages) Siemens Semiconductor Group – Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz)

Product specification
BAR 63-03W
Features
PIN diode for high speed switching of RF signals
Low forward resistance
Very low capacitance
For frequencies up to 3 GHz
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maxim um Ratings Ta = 25
P aram eter
Sym bol
Reverse voltage
VR
Forward current
IF
Total Power dissipation
TS 111
P tot
Operating tem perature range
Top
Storage temperature range
Tstg
Junction - soldering point¹⁾
R thJA
Junction-soldering point
R thJS
Note:
1.Package m ounted on alum ina 15m m x 16.7m m x 0.7m m
Value
50
100
250
-55 to +150
-55 to +150
235
155
Unit
V
mA
mW
K/W
K/W
Electrical Characteristics Ta = 25
Parameter
Breakdown voltage
Reverse current
Forward voltage
Symbol
V(BR)
IR
VF
Diode capacitance
CT
Forward resistance
rf
Charge carrier life time
rr
Series inductance
Ls
Conditions
IR = 5 A
VR = 50 V
IF = 100 mA
VR = 0 V, f = 100 MHz
VR = 5 V, f = 1 MHz
IF = 5 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
IF = 10 mA, IR = 6 mA,IR = 3mA
Min
Typ
Max
Unit
50
V
50
nA
0.95
1.2
V
0.3
pF
0.21
0.3
1.2
2
1
75
ns
2
nH
Marking
Marking
G
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