BAR17 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon PIN Diode

Product specification
BAR17
Features
RF switch
RF attenuator for frequencies above 1 MHz
Low distortion factor
Long-term stability of electrical characteristics
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Absolute M axim um Ratings Ta = 25
Param eter
Reverse voltage
Forward current
Total power dissipation, TS
95 ¹⁾
Junction tem perature
Storage tem perature
Operating tem perature range
Junction - am bient ¹⁾
Junction - soldering point
Note
1. Package m ounted on alum ina 15 m m
Sym bol
VR
IF
P tot
Tj
T stg
Top
R thJA
R thJS
V a lu e
100
140
250
150
-55 to +150
-55 to +150
295
215
16.7 m m 0.7 m m .
Electrical Characteristics Ta = 25
P aram eter
Reverse current
Forward voltage
Diode capacitance
Charge carrier life time
Forward resistance
Symbol
Test Condition
Min
VR = 50 V
IR
VR = 100 V
VF
IF = 100 mA
VR = 50 V, f = 1 MHz
CT
VR = 0 , f = 100 MHz
ôL
IF = 10 mA, IR = 6 mA
IF = 0.01 mA, f = 100 MHz
IF = 0.1 mA, f = 100 MHz
rf
IF = 1 mA, f = 100 MHz
IF = 10 mA, f = 100 MHz
U n it
V
mA
mW
K/W
Typ
0.91
0.32
0.37
4
1150
160
23
3.5
Max
50
1
1
0.55
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
Unit
nA
A
V
pF
s
Marking
Marking
L6
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