BAP64-03 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Silicon PIN diode

Product specification
BAP64-03
Features
High voltage, current controlled
RF resistor for RF attenuators and switches
Low diode capacitance
Low diode forward resistance
Low series inductance
For applications up to 3 GHz.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
Symbol
Min
VR
IF
Ptot
Tstg
-65
Tj
-65
Rth j-s
Max
Unit
175
V
100
mA
500
mW
+150
+150
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
forward voltage
VF
IF = 50 mA
0.95
1.1
V
reverse leakage current
IR
VR = 175 V
VR = 20 V
10
V
1
nA
VR = 0; f = 1 MHz
0.48
diode capacitance
Cd
VR = 1 V; f = 1 MHz
0.35
0.5
pF
VR = 20V; f = 1 MHz
0.23
0.35
IF = 0.5 mA; f = 100 MHz; note 1
20
40
IF = 1 mA; f = 100 MHz; note 1
diode forward resistance
rD
IF = 10 mA; f = 100 MHz; note 1
10
20
2
3.8
IF = 100 mA; f = 100 MHz; note 1
0.7
1.35
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
L
1.55
ns
RL = 100 ;measured at IR = 3 mA
series inductance
LS
1.68
nH
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A3
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