BAP51-03 Datasheet, PDF (1/1 Pages) NXP Semiconductors – General purpose PIN diode

Product specification
BAP51-03
Features
Low diode capacitance
Low diode forward resistance.
SOD-323
1.7+0.1
-0.1
Unit: mm
0.85^+0.05
-0.05
2.6+0.1
-0.1
0.475
0.375
1.0max
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Min
continuous reverse voltage
VR
continuous forward current
IF
total power dissipation
Ts = 90
Ptot
storage temperature
Tstg
-65
junction temperature
Tj
-65
thermal resistance from junction to soldering point
Rth j-s
Max
Unit
50
V
50
mA
500
mW
+150
+150
120
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
forward voltage
VF
IF = 50 mA
0.95
1.1
V
reverse voltage
VR
IR = 10 A
50
V
reverse current
IR
VR = 50 V
100
nA
VR = 0; f = 1 MHz
0.4
diode capacitance
Cd
VR = 1V; f = 1 MHz
0.3
0.55
pF
VR = 5V; f = 1 MHz
0.2
0.35
IF = 0.5 mA; f = 100 MHz; note 1
5.5
40
diode forward resistance
rD
IF = 1 mA; f = 100 MHz; note 1
3.6
25
IF = 10 mA; f = 100 MHz; note 1
1.5
5
when switched from IF = 10 mA to IR = 6 mA;
charge carrier life time
L
550
ns
RL = 100 ;measured at IR = 3 mA
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A5
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