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BAP51-02 Datasheet, PDF (1/1 Pages) Leshan Radio Company – General purpose PIN diode
Features
Low diode capacitance
Low diode forward resistance.
Product specification
BAP51-02
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
continuous reverse voltage
continuous forward current
total power dissipation
Ts = 90
storage temperature
junction temperature
thermal resistance from junction to soldering point
Symbol
Min
Max
Unit
VR
50
V
IF
50
mA
Ptot
715
mW
Tstg
-65
+150
Tj
-65
+150
Rth j-s
85
K/W
Electrical Characteristics Ta = 25
Parameter
Symbol
Conditions
forward voltage
VF
IF = 50 mA
reverse voltage
VR
IR = 10 A
reverse current
IR
VR = 50 V
VR = 0; f = 1 MHz
diode capacitance
Cd
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz; note 1
diode forward resistance
rD
IF = 1 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
Marking
Marking
A5
Min
Typ
Max
Unit
0.95
1.1
V
50
V
100
nA
0.4
0.3
0.55
pF
0.2
0.35
5.5
9
3.6
6.5
1.5
2.5
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sales@twtysemi.com
4008-318-123
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