BAP50-04 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose PIN diode

Product specification
BAP50-04
■ Features
● Low diode capacitance.
● Low diode forward resistance.
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
2
1
3
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Continuous reverse voltage
Continuous forward current
Total power dissipation TS = 90℃
Storage temperature
Junction temperature
Thermal resistance from junction to soldering point
Symbol
VR
IF
Ptot
Tstg
Tj
Rth j-s
Rating
50
50
250
-65 to +150
150
220
Unit
V
mA
mW
℃
℃
℃/W
Unit: mm
0.1^+0.05
-0.01
■ Electrical Characteristics Ta = 25℃
Parameter
Forward voltage
Reverse voltage
Reverse current
Diode capacitance
Symbol
VF
VR
IR
Cd
Diode forward resistance
rD
■ Marking
Marking
4LP
Test conditons
IF = 50 mA
IR = 10 μA
VR = 50 V
VR = 0; f = 1 MHz
VR = 1 V; f = 1 MHz
VR = 5 V; f = 1 MHz
IF = 0.5 mA; f = 100 MHz
IF = 1 mA; f = 100 MHz
IF = 10 mA; f = 100 MHz
Min Typ Max Unit
0.95 1.1 V
50
V
100 nA
0.45
pF
0.35 0.5 pF
0.3 0.5 pF
25 40 Ω
14 25 Ω
3
5
Ω
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