BA891 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Band-switching diode

Product specification
BA891
Features
Very small plastic SMD package
Low diode capacitance:max. 1.05 pF
Low diode forward resistance:max. 0.7
Small inductance.
SOD-523
1.2+0.1
-0.1
+
Unit: mm
0.6^+0.1
-0.1
-
1.6+0.1
-0.1
0.77max
Absolute Maximum Ratings Ta = 25
Parameter
Continuous reverse voltage
Continuous forward current
Total power dissipation
Storage temperature
Junction temperature
Symbol
VR
IF
Ptot
Tstg
Tj
Conditions
Ts = 90
Min
Max
Unit
35
V
100
mA
715
mW
-65
+150
-65
+150
Electrical Characteristics Ta = 25
P aram eter
Symbol
Conditions
Forward voltage
VF
IF = 10 mA
Reverse current
IR
VR = 30 V
f = 1 MHz; note 1
Diode capacitance
Cd
VR = 1 V
VR = 3 V
f = 100 MHz; note 1
Diode forward resistance
rD
IF = 3 mA
IF =10 mA
Series inductance
Ls
Note
1.Guaranteed on AQL basis; inspection level S4, AQL 1.0.
Typ
0.8
0.65
0.45
0.36
0.6
Max
1
20
1.05
0.9
0.7
0.5
Unit
V
nA
pF
pF
nH
Marking
Marking
7
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