BA886 Datasheet, PDF (1/1 Pages) Siemens Semiconductor Group – Silicon PIN Diode

Product specification
BA886
Features
Current-controlled RF resistor for switching and attenuating applications
Frequency range above 1 M
Designed for low IM distortion
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
1
2
0.95+0.1
-0.1
1.9^+0.1
-0.1
Unit: mm
0.1^+0.05
-0.01
Absolute Maxim um Ratings Ta = 25
P aram eter
Symbol
Reverse Voltage
VR
Forward Current
IF
Operating temperature range
Top
Storage temperature range
Tstg
Junction ambient
R thJA
Note:
1. Package mounted on alumina 15 mm 16.7 mm
Value
50
50
-55 to +125
-55 to +150
450
0.7 mm.
Electrical Characteristics Ta = 25
P aram eter
Forward Voltage
Reverse Current
Symbol
VF
IR
Diode capacitance
CT
Forward resistance
rf
Zero bias conductance
gp
Series inductance
LS
Conditions
IF = 50 mA
VR = 50 V
VR = 50 V, f = 1 MHz
VR = 0 V, f =100 MHz
f = 100 MHz
IF = 10 A
IF = 1 mA
IF = 10 mA
VR = 0 V, f = 100 MHz
Marking
Marking
PC
Unit
V
mA
K/W
Min
Typ
0.23
0.20
2400
58
6.5
7.8
40
2
1.Base
2.Emitter
3.collector
Max
Unit
1.15
V
50
nA
0.35
pF
10
S
nH
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1