B5819W Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Product specification
B5819W
FEATURES
Power dissipation
P_D : 450 mW Tamb=25
Collector current
I_F: 1 A
Collector-base voltage
V_R: 40 V
Operating and storage junction temperature range
T_J T_stg: -55 to +150
Unit mm
MARKING SL
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
V(BR)
IR
VF
CD
IR= 1mA
VR=40V
VR=4V
VR=6V
IF=0.1A
IF=1A
IF=3A
VR=4V f=1MHz
MIN
MAX
UNIT
40
V
1
0.05
0.075
0.45
0.6
V
0.9
120
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