B5818WS Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – SCHOTTKY BARRIER DIODE

Product specification
SOD-323 Plastic-Encapsulate Diodes
B5817WS-5819WS SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters
Free wheeling, and polarity protection applications
SOD-323
MARKING: B5817WS: SJ
B5818WS:SK
B5819WS: SL
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃
Parameter
Non-repetitive peak reverse voltage
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
RMS reverse voltage
Average rectified output current
Peak forward surge current @t=8.3ms
Repetitive peak forward current
Power dissipation
Thermal resistance junction to
ambient
Junction temperature
Storage temperature
Symbol B5817WS
V_RM
20
V_RRM
V_RWM
20
V_R
V_R(RMS)
14
I_O
I_FSM
I_FRM
Pd
R_θJA
TJ
T_STG
B5818WS
30
30
21
1
9
1.5
250
400
125
-55~+150
B5819WS
40
40
28
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Unit
V
V
V
A
A
A
mW
℃/W
℃
℃
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Symbol
Test conditions
Min
I_R= 1mA
V_(BR)
B5817WS
20
B5818WS
30
B5819WS
40
V_R=20V
B5817WS
I_R
V_R=30V
B5818WS
V_R=40V
B5819WS
B5817WS I_F=1A
I_F=3A
V_F
B5818WS I_F=1A
I_F=3A
B5819WS I_F=1A
I_F=3A
C_D
V_R=4V, f=1MHz
http://www.twtysemi.com
[e-mail]
4008-318-123
Max
1
0.45
0.75
0.55
0.875
0.6
0.9
120
Unit
V
mA
V
V
V
pF
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