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| AP2322GN Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Product specification
AP2322GN
â¼ Capable of 1.8V gate drive
â¼ Simple Drive Requirement
â¼ Surface mount package
Description
D
S
SOT-23 G
BVDSS
RDS(ON)
ID
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
G
20V
90mΩ
2.5A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4.5V
Continuous Drain Current3, VGS @ 4.5V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
20
±8
2.5
2.0
10
0.833
0.006
-55 to 150
-55 to 150
Value
150
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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