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| AP2320GN Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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Product specification
AP2320GN
â¼ Simple Drive Requirement
D
â¼ Small Package Outline
â¼ Surface Mount Device
â¼ RoHS Compliant
S
SOT-23 G
Description
Advanced Power MOSFETs utilized advanced processing
techniques to achieve the lowest possible on-resistance, extremely
efficient and cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial
applications.
BVDSS
RDS(ON)
ID
G
100V
5Ω
0.25A
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Rating
100
+20
0.25
0.2
1
0.7
0.005
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Value
180
Unit
â/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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