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AP2318GEN-HF Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – Capable of 2.5V Gate Drive, Small Outline Package
Product specification
AP2318GEN-HF
▼ Capable of 2.5V Gate Drive
▼ Small Outline Package
▼ Surface Mount Device
▼ RoHS Compliant
Description
D
S
SOT-23 G
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is widely used for commercial-industrial applications.
BVDSS
RDS(ON)
ID
G
30V
1.5Ω
500mA
D
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 4V
Continuous Drain Current3, VGS @ 4V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
30
±16
0.5
0.4
2
0.7
0.006
-55 to 150
-55 to 150
Value
180
Units
V
V
A
A
A
W
W/℃
℃
℃
Unit
℃/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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