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AP2315GEN Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Product specification
AP2315GEN
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
Description
SOT-23
The Advanced Power MOSFETs from TY provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
S
G
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BVDSS
RDS(ON)
ID
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25℃
ID@TA=70℃
IDM
PD@TA=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
- 30
±16
-840
-670
-2.5
1.38
0.01
-55 to 150
-55 to 150
Max.
Value
90
-30V
1.25Ω
- 840mA
D
S
Units
V
V
mA
mA
A
W
W/℃
℃
℃
Unit
℃/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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