AP2310GN Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET

DSS_DSMMI_MIP_PDD_DT_TTT_Ty_yyy_yp_ppp_pe_eee_e
■ Features
● Simple Drive Requirement
● _{Small Package Outline}
● _{Surface Mount Device}
D
G
S
MM_MOO_OSS_SFF_FI_IC_CEE_ETT_T
Product specification
AP2310GN
SOT-23-3
2.9+0.2
-0.2
0.4+0.1
-0.05
3
1
2
0.95+0.1
-0.1
1.9^+0.2
-0.2
Unit: mm
0.1+0.05
-0.01
1.Gate
2.Soruce
3.Drain
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
TA= 25 ^℃
TA=70^℃
Pulsed Drain Current *
Power Dissipation
TA=25^℃
Linear Derating Factor
Thermal Resistance.Junction-to-ambient
Junction and Storage Temperature Range
* 2.Pulse width ^≤300us , duty cycle^≤ 2%.
Sy mb ol
VD S
VG S
ID
I DM
PD
Rt h Ja
TJ , TSTG
Rating
60
±20
3
2. 3
10
1. 38
0. 01
90
-55 to 150
Unit
V
V
A
W
W/^℃
℃_/W
℃
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[e-mail]
4008-318-123
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