AP2309N Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Product specification
AP2309N
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Description
D
S
SOT-23 _G
The Advanced Power MOSFETs from TY provide the
designer with the best combination of fast switching,
, low on-resistance and cost-effectiveness.
The SOT-23 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
BV_DSS
R_DS(ON)
I_D
-30V
75mΩ
- 3.7A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³
Continuous Drain Current³
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
Rating
- 30
±20
- 3.7
-3
-12
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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